This paper investigates a theoretical model for the interaction between electrons and holes (E/H) in elastic non-local semiconductors. When the medium is activated by photo-energy because of high temperatures, an optical-elastic-thermal-diffusion (OETD) process occurs and is described by this mathematical-physical model. A study is conducted on the impact of the Hall current brought on by the collapse of a strong magnetic field on the exterior of the non-local semiconductor medium. A Hall effect is brought on by the magnetic field’s effect on the density of magnetic flux. The Laplace transform with initial conditions of the dimensionless main physical fields in one dimension (1D) is used to demonstrate this. Mathematically, in the Laplace domain, the generic linear solutions for the strain and temperature distributions, as well as charge carrier holes and electrons, are derived. The key physical fields’ complete solutions in the time domain are obtained by numerically simulating a few thermal, mechanical, and optical conditions at the free surface of the semiconductor using the Laplace inverse approximation technique. For silicon material, the photo-thermoelasticity theory’s Hall current effect, non-local parameter, and effects of thermal relaxation durations are graphically displayed and analyzed.